Insulated-Gate Bipolar Transistor Controlled Reactor

by Abdulkareem Mokif Obais, Jagadeesh Pasupuleti
Vol. 4. n. 6, pp. 2967-2972, 2011

Abstract -
In this paper a controlled reactor using insulated-gate bipolar transistor (IGBT) is presented. Controlled reactors are usually implemented by using thyristors since the mid-1970’s and they are usually referred to as thyristor-controlled reactors. A thyristor-controlled reactor (TCR) is simply two anti-parallel thyristors connected in series with a fixed inductor or reactor. In TCR, it is only required to specify the instants at which its thyristors must start conduction. Once a thyristor conducts, its current keeps on flowing as long as its magnitude is above holding limit and hence no trigger is required after starting of conduction. In addition, a thyristor will be naturally commutated as soon as its current decays below holding limit. For IGBT, the instant at which the device must start conduction and the conduction period must be both identified because maintaining conduction requires keeping on activating the device gate as long its current is still greater than zero. The problem is how long should the IGBT conduct and when it will be turned off? In this paper a reliable control strategy is adopted for presenting the IGBT as a good replacement of thyristor in controlled reactors. A demonstrating system is designed and implemented on the computer program PSpice.